• DocumentCode
    875433
  • Title

    Transient Radiation Upset Simulations of CMOS Memory Circuits

  • Author

    Massengill, Lloyd W. ; Diehl-Nagle, Sherra E.

  • Author_Institution
    Department of Electrical and Computer Engineering North Carolina State University Raleigh, NC 27695-7911
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1337
  • Lastpage
    1343
  • Abstract
    A computer simulation technique has identified and modeled a dominant mechanism for transient ionizing radiation induced logic upset in certain CMOS integrated circuits. This mechanism, termed ´rail span collapse´ here, has accounted for the discrepancy between simulated upsets of these circuits using only local radiation induced photocurrents and the experimentally observed upset dose-rate levels.
  • Keywords
    CMOS integrated circuits; CMOS logic circuits; CMOS memory circuits; Circuit simulation; Computational modeling; Computer simulation; Integrated circuit modeling; Ionizing radiation; Rails; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333507
  • Filename
    4333507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875433