Fabrication of InGaAsP/InP buried heterostructure laser using reactive ion etching and metalorganic chemical vapor deposition

Author

Lee, B.-T. ; Logan, R.A. ; Kalicek, R.F., Jr. ; Sergent, A.M. ; Coblentz, D.L. ; Wecht, K.W. ; Tanbun-Ek, T.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

5

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

279

Lastpage

281

Abstract

1.3- mu m InGaAsP/InP buried heterostructure lasers were fabricated using Ch/sub 4//H/sub 2/ reactive ion etching (RIE) for mesa definition and metalorganic chemical vapor deposition for blocking laser growth. Results show that high-quality lasers can be made using RIE, with threshold current as low as 10 mA. It was also found that a slight chemical etching of the RIE mesas was necessary to obtain lasers with as high quality as those fabricated entirely by wet etching.<>

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 10 mA; IR; InGaAsP-InP; buried heterostructure laser; diode laser fabrication; high-quality lasers; layer growth blocking; mesa definition; metalorganic chemical vapor deposition; reactive ion etching; semiconductors; slight chemical etching; threshold current; Chemical lasers; Chemical vapor deposition; Indium phosphide; MOCVD; Manufacturing processes; Optical device fabrication; Scanning electron microscopy; Temperature measurement; Threshold current; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.205611

Filename

205611