DocumentCode :
875457
Title :
Dose Rate Effects in MOS Microcircuits
Author :
Cleveland, David G.
Author_Institution :
NASA/Goddard Space Flight Center Greenbelt, Maryland 20771
Volume :
31
Issue :
6
fYear :
1984
Firstpage :
1348
Lastpage :
1353
Abstract :
Three read/write random access memories, AM91L24, HM1-6514, and MWS 5114, were subjected to total dose irradiation at three dose rates, with electrical testing after each increment of dosage. Annealing measurements were performed after the radiation tests were completed. The AM91L24 showed a strong dose rate effect and substantial postirradiation annealing of radiation-induced damage. The dose rate effect was that a lower dose rate produced less net damage than an eqivalent total dose applied at a higher rate. The HM1-6514 showed essentially no dose rate effect and no annealing of damage, and the MWS 5114 exhibited a moderate effect with some annealing. It was concluded that dose rate is an important parameter in radiation test procedures for MOS microcircuits and that annealing measurements may be important evaluation aids for such tests.
Keywords :
Annealing; CMOS technology; Circuit testing; Ionizing radiation; MOS devices; NASA; Packaging; Performance evaluation; Random access memory; Temperature distribution;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1984.4333509
Filename :
4333509
Link To Document :
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