Title :
Time-domain method of measuring transistor parameters
fDate :
8/1/1971 12:00:00 AM
Abstract :
A method for the two-lump charge-control transistor model is presented. The parameter values are obtained by fitting the model equations to some standard digital responses. This technique provides a natural way of obtaining appropriate constant parameter values to use for typical digital situations, even when the actual parameters vary over the digital response. The method described here does not require expensive repetitive nonlinear circuit analysis runs for the fitting. Instead, the nonlinear circuit equations are never solved since the fitting technique is applied to the basic equations themselves rather than to their solutions. Sensitivity studies indicate that the technique requires only simple instrumentation and that automated measurements could be readily performed using a computer-controlled dynamic test system.
Keywords :
Computer-aided circuit analysis; Modelling; Semiconductor device models; Time-domain analysis; Transistors; computer-aided circuit analysis; modelling; semiconductor device models; time-domain analysis; transistors; Automatic testing; Circuit analysis; Circuit testing; Instruments; Nonlinear circuits; Nonlinear dynamical systems; Nonlinear equations; Performance evaluation; System testing; Time domain analysis;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1050171