Computer simulation of a microwave power transistor

The computer simulation of a 2 GHz 1 W overlay transistor discloses that a relatively simple device model of the modified Ebers-Moll type can give good results when embedded in a network representing the important package parasitics. The resulting composite model is tested by presenting it with lumped-element networks to simulate the source and load impedances that maximize gain under given conditions of frequency and input power. Predicted and measured performance data are compared.