DocumentCode
875718
Title
Simple CAD technique to develop high-frequency transistors
Author
Kakihana, Sanehiko ; Wang, Patrick Hwayan
Volume
6
Issue
4
fYear
1971
fDate
8/1/1971 12:00:00 AM
Firstpage
236
Lastpage
243
Abstract
The emitter and base impurity concentration profiles and the epitaxial thickness of the collector of n-p-n microwave transistors have been optimized for f/SUB max/ by a simple computer-aided design technique. The optimized profile was synthesized and led to devices with f/SUB max/ between 15 and 18 GHz when fabricated with a mask with 1.5-μ emitter widths. The details of the optimization procedure, the synthesis procedure and the r.f. results of fabricated devices are described.
Keywords
Amplifiers; Bipolar transistors; Computer-aided circuit design; Microwave amplifiers; Optimisation; Power amplifiers; Semiconductor doping; amplifiers; bipolar transistors; computer-aided circuit design; microwave amplifiers; optimisation; power amplifiers; semiconductor doping; Bipolar transistors; Circuit analysis computing; Cost function; Design automation; Design optimization; Impurities; Microwave devices; Microwave theory and techniques; Microwave transistors; Radio frequency;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1971.1050173
Filename
1050173
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