Nonlinearity and cross modulation in field-effect transistors

It is shown that present large-signal models are inadequate for cross modulation in field-effect transistors, but the cross-modulation performance can be accurately predicted from a power-series approximation to the measured l.f. transfer characteristic of the device. The cross modulation for typical field- effect transistors is essentially independent of frequency up to about 100 MHz. A large-signal h.f. model of the field-effect transistor is proposed for the prediction of cross modulation and related phenomena at very high frequencies. Computer predictions of cross modulation based on this model agree well with experimental measurements.