DocumentCode
875741
Title
Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ Structures
Author
Flesner, L.D.
Author_Institution
Electronic Material Sciences Division Naval Ocean Systems Center, San Diego, CA 92152
Volume
31
Issue
6
fYear
1984
Firstpage
1502
Lastpage
1507
Keywords
Circuits; Conducting materials; FETs; Gallium arsenide; Photoconducting devices; Photoconductivity; Pulse modulation; Radiation effects; Scanning electron microscopy; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1984.4333538
Filename
4333538
Link To Document