DocumentCode
875748
Title
Automated bipolar junction transistor d.c. model parameter determination
Author
Rohrer, Ron ; Fan, S.P. ; Claudio, L.
Volume
6
Issue
4
fYear
1971
fDate
8/1/1971 12:00:00 AM
Firstpage
260
Lastpage
262
Abstract
A computational algorithm is described for obtaining meaningful model parameters from an arbitrary number of terminal measurements. The model parameters are obtained from a least- squares fit between measured and simulated data.
Keywords
Bipolar transistors; Computer-aided circuit analysis; Modelling; Semiconductor device models; bipolar transistors; computer-aided circuit analysis; modelling; semiconductor device models; Bipolar integrated circuits; Bipolar transistors; Circuit simulation; Computational modeling; Computer simulation; Electronic circuits; Equations; Integrated circuit measurements; Integrated circuit modeling; Temperature;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1971.1050176
Filename
1050176
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