Title :
Automated bipolar junction transistor d.c. model parameter determination
Author :
Rohrer, Ron ; Fan, S.P. ; Claudio, L.
fDate :
8/1/1971 12:00:00 AM
Abstract :
A computational algorithm is described for obtaining meaningful model parameters from an arbitrary number of terminal measurements. The model parameters are obtained from a least- squares fit between measured and simulated data.
Keywords :
Bipolar transistors; Computer-aided circuit analysis; Modelling; Semiconductor device models; bipolar transistors; computer-aided circuit analysis; modelling; semiconductor device models; Bipolar integrated circuits; Bipolar transistors; Circuit simulation; Computational modeling; Computer simulation; Electronic circuits; Equations; Integrated circuit measurements; Integrated circuit modeling; Temperature;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1050176
