DocumentCode
875840
Title
Soft Error Dependence on Feature Size
Author
Brucker, G.J. ; Smeltzer, R. ; Kolasinski, W.A. ; Koga, R.
Author_Institution
RCA Astro-Electronics, Princeton, NJ
Volume
31
Issue
6
fYear
1984
Firstpage
1562
Lastpage
1564
Abstract
This paper reports on an experimental effort to determaine the dependence of critical charge, Qc on feature size (channel length L), in CMOS/SOS rad-hard 16K memories. The Single Event Upset (SEU) tests were conducted at the Berkeley 88" cyclotron, using krypton ions of 138 MeV and argon ions of 85 MeV with LET values of 40 and 18.3 MeV-cm2/mg, respectively. A subsequent second test was conducted at the Oak Ridge Van de Graaff. Gold ions of 591 MeV with an LET = 88 MeV-cm2/mg were used to test samples from the same lots as in the Berkeley test. Results showed that Qc ¿ L1.6 ±0.2.
Keywords
Argon; CMOS technology; Cyclotrons; Gold; Iron; Radiation hardening; Scanning electron microscopy; Single event upset; Smelting; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1984.4333549
Filename
4333549
Link To Document