DocumentCode
875885
Title
Silicon ´punch-through´ diode
Author
Kuchis, E.B. ; Wright, G.T.
Author_Institution
University of Birmingham, Electronic & Electrical Engineering Department, Birmingham, UK
Volume
4
Issue
2
fYear
1968
Firstpage
35
Lastpage
37
Abstract
The large-signal a.c. characteristics of trap-controlled space-charge-limited current in silicon are described. At high frequencies, trapping is stationary and current occurs only when the applied signal voltage exceeds a threshold. Characteristics may be symmetrical or rectifying. Device capacitance is small and constant. Extremely sharp ´turn-on´ and `turn-off´ of current is predicted with response times of the order of 5 ps. Device construction is simple and applications in microwave systems are envisaged.
Keywords
microwave devices; semiconductor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19680028
Filename
4209977
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