Dual composite mesh method for semiconductor field calculations

Author

Kojima, Toshiaki ; Saito, Yoshifuru ; Dang, Ryo

Author_Institution

Graduate Sch. of Eng., Hosei Univ., Tokyo, Japan

Volume

27

Issue

5

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

4166

Lastpage

4169

Abstract

The use of a Voronoi-Delaunay diagram as a dual composite mesh system for applying a united discretization method to the governing equations of a semiconductor device is described. The approach consists of discretizing the Poisson equation on the Voronoi mesh system while the continuity equations are solved on the Delaunay mesh system based on a transformation of the current density into a stream function. Compared with a conventional method based on the Scharfetter (1969) and Gummel (1964) discretization scheme, the proposed approach proves to yield results of equivalent accuracy.

Keywords

electromagnetic field theory; semiconductor devices; Delaunay mesh system; Poisson equation; Voronoi mesh system; Voronoi-Delaunay diagram; continuity equations; current density; discretization method; dual composite mesh system; semiconductor device; semiconductor field calculations; stream function; Charge carrier processes; Current density; Current-voltage characteristics; Electron mobility; Finite difference methods; Finite element methods; MOSFET circuits; Poisson equations; Radiative recombination; Semiconductor devices;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.105019

Filename

105019