Dynamic and noise properties of tunable multielectrode semiconductor lasers including spatial hole burning and nonlinear gain

Author

Duan, Guang-Hua ; Gallion, Philippe ; Agrawal, Govind P.

Author_Institution

Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France

Volume

29

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

844

Lastpage

855

Abstract

A general formalism based on the Green´s function method is given for multielectrode semiconductor lasers. The effects of both spatial hole burning and nonlinear gain are included in this formalism. An effective nonlinear gain is introduced by taking into account the influence of the laser structure and the associated distribution of the mode intensity along the cavity length and the frequency and intensity modulation properties of multielectrode semiconductor lasers are studied. A general linewidth expression which includes contributions from spontaneous emission and carrier shot noise is given. It is found that the effective α-factor affecting the linewidth is in general different from its counterpart affecting modulation and injection locking properties due to spatial hole burning and nonlinear gain. The linewidth due to various contributions is calculated for both uniform intensity distributed lasers and phase-shifted distributed feedback (DFB) lasers

Keywords

Green´s function methods; distributed feedback lasers; laser cavity resonators; laser modes; laser theory; laser tuning; optical hole burning; optical modulation; random noise; semiconductor device noise; semiconductor lasers; spectral line breadth; DFB lasers; Green´s function method; carrier shot noise; cavity length; distributed feedback; distributed lasers; dynamic properties; effective α-factor; frequency modulation; injection locking; intensity modulation properties; laser modes; laser structure; linewidth expression; mode intensity; noise properties; nonlinear gain; phase-shifted; spatial hole burning; spontaneous emission; tunable multielectrode semiconductor lasers; uniform intensity; Distributed feedback devices; Frequency; Green´s function methods; Intensity modulation; Laser feedback; Laser modes; Laser noise; Semiconductor device noise; Semiconductor lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.206568

Filename

206568