Title :
Application of 2-dimensional solutions of the Shockley-Poisson equation to inversion-layer m.o.s.t. devices
Author :
Loeb, H.W. ; Andrew, Richard ; Love, W.
Author_Institution :
College of Aeronautics, Cranfield, UK
Abstract :
A model for inversion-layer m.o.s.t.s is outlined which avoids the usual gradual-channel approximation by the use of 2-dimensional solutions to the Shockley-Poisson and Laplace equations governing the field distribution. Computed I/V and C/V characteristics and potential-distribution; diagrams are shown for a particular device geometry.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680277