DocumentCode :
877006
Title :
Application of 2-dimensional solutions of the Shockley-Poisson equation to inversion-layer m.o.s.t. devices
Author :
Loeb, H.W. ; Andrew, Richard ; Love, W.
Author_Institution :
College of Aeronautics, Cranfield, UK
Volume :
4
Issue :
17
fYear :
1968
Firstpage :
352
Lastpage :
354
Abstract :
A model for inversion-layer m.o.s.t.s is outlined which avoids the usual gradual-channel approximation by the use of 2-dimensional solutions to the Shockley-Poisson and Laplace equations governing the field distribution. Computed I/V and C/V characteristics and potential-distribution; diagrams are shown for a particular device geometry.
Keywords :
transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19680277
Filename :
4210094
Link To Document :
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