• DocumentCode
    877072
  • Title

    Microwave silicon Schottky-barrier field-effect transistor

  • Author

    Drangeid, K.E. ; Jaggi, R. ; Middelhoek, S. ; Mohr, Th. ; Moser, A. ; Sasso, Grazia ; Sommerhalder, R. ; Wolf, Philip

  • Author_Institution
    IBM Zÿrich Research Laboratory, Rÿschlikon, Switzerland
  • Volume
    4
  • Issue
    17
  • fYear
    1968
  • Firstpage
    362
  • Lastpage
    363
  • Abstract
    Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1 ¿m wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz.
  • Keywords
    microwave devices; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680284
  • Filename
    4210101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877072