Extraction of material parameters in film bulk acoustic resonator (FBAR) using genetic algorithm

Author

Lee, Jeongheum ; Jung, Jaeyong ; Park, Jong-Il ; Kim, Hyeongdong

Author_Institution

Graduate Sch. of Hanyang Univ., Seoul, South Korea

Volume

25

Issue

2

fYear

2004

Firstpage

67

Lastpage

69

Abstract

The extraction of material parameters from the given (or measured) input impedance of film bulk acoustic resonators (FBARs) using a genetic algorithm (GA) is proposed. After studying the effect of material parameter changes on impedance responses, resonance characteristics of FBARs are used to extract the material parameters. The extracted result agrees very well with the given material parameters.

Keywords

acoustic resonators; bulk acoustic wave devices; circuit resonance; genetic algorithms; impedance matching; film bulk acoustic resonator; film bulk acoustic resonators; genetic algorithm; impedance responses; input impedance; material parameters extraction; piezoelectric material parameter extraction; resonance characteristics; Acoustic devices; Acoustic materials; Acoustic propagation; Bandwidth; Film bulk acoustic resonators; Genetic algorithms; Impedance; Piezoelectric materials; Resonance; Resonant frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.819911

Filename

1263629