DocumentCode
877115
Title
A novel high-performance bipolar monolithic memory cell
Author
Farber, A.S. ; Schlig, E.S.
Volume
7
Issue
4
fYear
1972
Firstpage
297
Lastpage
298
Abstract
A novel memory cell is described that is used in several IBM processors. It is fast, insensitive to disturbance by reading and half-selects, and delivers a large sense signal.
Keywords
Monolithic integrated circuits; Semiconductor storage devices; monolithic integrated circuits; semiconductor storage devices; Buffer storage; Circuits; Delay; Diodes; Impedance; Latches; Pulse amplifiers; Signal processing; Switches; Writing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1972.1050302
Filename
1050302
Link To Document