Title :
On the electron mobility in ultrathin SOI and GOI
Author :
Khakifirooz, Ali ; Antoniadis, Dimitri A.
Author_Institution :
Microsystems Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
The mobility of electrons in ultrathin silicon-on-insulator (SOI) and germanium-on-insulator (GOI) is studied. Quantum simulations are carried out to calculate phonon-limited mobility based on the experimental data for bulk. Modulation of the electron population in different ladders is shown to have a constructive effect in (111) Ge, whereas in (100) Ge mobility drops monotonically with either increase of gate bias or by thinning the GOI film.
Keywords :
electron mobility; germanium compounds; semiconductor thin films; silicon compounds; silicon-on-insulator; Ge; electron mobility; electron population modulation; gate bias; germanium-on-insulator; ladders; phonon scattering; phonon-limited mobility; quantum simulations; silicon-on-insulator; ultrathin GOI; ultrathin SOI; Degradation; Electron mobility; Germanium; Logic circuits; MOSFET circuits; Particle scattering; Phonons; Potential well; Semiconductor films; Silicon on insulator technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.822650
