Title :
High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
Author :
Chao, Tien-Sheng ; Lee, Yao-Jen ; Huang, Tiao-Yuan
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.
Keywords :
MOSFET; Schottky barriers; electrical contacts; DTMOS; Schottky substrate junction; driving current; dynamic threshold voltage MOSFET; high-temperature application; high-voltage application; reverse Schottky barrier; substrate contacts; subthreshold slope; Chaos; Forward contracts; MOSFET circuits; Plasma temperature; Schottky barriers; Schottky diodes; Silicon; Substrates; Threshold voltage; Tin;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.822656
