DocumentCode
877209
Title
High-frequency transistor modeling for circuit design
Author
Macnee, A.B. ; Talsky, R.J.
Volume
7
Issue
4
fYear
1972
Firstpage
320
Lastpage
322
Abstract
It has been found that certain high-frequency transistor types cannot be modeled accurately over wide frequency ranges with the hybrid pi or high-frequency T models even though reasonable extrinsic elements are added. Modifying the hybrid pi by replacing r/SUB /spl pi//C/SUB /spl pi// with an RC ladder extends the useful frequency range for that model to f/SUB T//2. A computer optimization program is used to determine the appropriate element values for the extended hybrid-pi model. For the 2N918, a two-section ladder gives a 3 : 1 improvement in the usable frequency range of the model.
Keywords
Optimisation; Semiconductor device models; Transistors; optimisation; semiconductor device models; transistors; Admittance measurement; Circuit analysis computing; Circuit synthesis; Design optimization; Frequency measurement; Integrated circuit modeling; Integrated circuit packaging; Linear circuits; Shape measurement; Solid modeling;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1972.1050311
Filename
1050311
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