• DocumentCode
    877365
  • Title

    A linear voltage-tunable distributed null device

  • Author

    Benz, Harry F. ; Mattauch, Robert J.

  • Volume
    7
  • Issue
    6
  • fYear
    1972
  • Firstpage
    499
  • Lastpage
    503
  • Abstract
    A linear voltage-tunable null device was predicted, fabricated, and tested. This filter is conceptually a distributed parameter RC representation of the channel of a MOSFET in a network configuration with a second MOSFET that is treated as a variable resistor. Classical transmission-line theory is used to predict a linear tuning curve with applied bias for the device. This concept was used to design a null device having a null that is linearly tunable in the range of 100 kHz. Such devices were fabricated and tested. Typical MOS processing steps were used and the resulting structures are compatible with the planar technology. The compatibility leads towards extension of this work to different frequency ranges for other specific applications.
  • Keywords
    Active filters; Distributed parameter networks; Field effect transistors; Metal-insulator-semiconductor devices; active filters; distributed parameter networks; field effect transistors; metal-insulator-semiconductor devices; Capacitance; Constraint theory; Frequency; MOS devices; MOSFET circuits; Resistors; Silicon; Thick films; Transmission line theory; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1972.1050325
  • Filename
    1050325