DocumentCode :
877365
Title :
A linear voltage-tunable distributed null device
Author :
Benz, Harry F. ; Mattauch, Robert J.
Volume :
7
Issue :
6
fYear :
1972
Firstpage :
499
Lastpage :
503
Abstract :
A linear voltage-tunable null device was predicted, fabricated, and tested. This filter is conceptually a distributed parameter RC representation of the channel of a MOSFET in a network configuration with a second MOSFET that is treated as a variable resistor. Classical transmission-line theory is used to predict a linear tuning curve with applied bias for the device. This concept was used to design a null device having a null that is linearly tunable in the range of 100 kHz. Such devices were fabricated and tested. Typical MOS processing steps were used and the resulting structures are compatible with the planar technology. The compatibility leads towards extension of this work to different frequency ranges for other specific applications.
Keywords :
Active filters; Distributed parameter networks; Field effect transistors; Metal-insulator-semiconductor devices; active filters; distributed parameter networks; field effect transistors; metal-insulator-semiconductor devices; Capacitance; Constraint theory; Frequency; MOS devices; MOSFET circuits; Resistors; Silicon; Thick films; Transmission line theory; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1972.1050325
Filename :
1050325
Link To Document :
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