Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays

Author

Gasperin, Alberto ; Wrachien, Nicola ; Paccagnella, Alessandro ; Ottogalli, Federica ; Corda, Ugo ; Fuochi, Piergiorgio ; Lavalle, Marco

Author_Institution

Dipt. di Ing. dellTn- formazione, Univ. di Padova, Padova

Volume

55

Issue

4

fYear

2008

Firstpage

2090

Lastpage

2097

Abstract

We investigate Total Ionizing Dose effects on 4 Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the Word-Line selector MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.

Keywords

MOSFET; flash memories; radiation effects; PCM array; RESET operation; SET; ionizing radiation; phase change memory; total ionizing dose effect; word-line selector MOSFET; CMOS technology; Electrons; Flash memory; Integrated circuit technology; Ionizing radiation; Nonvolatile memory; Phase change materials; Phase change memory; Phased arrays; Radiation effects; Chalcogenide materials; GST; non-volatile memories; phase change memory; radiation effects; total ionizing dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.920425

Filename

4636883