Numerical study of avalanche multiplication in silicon p--n abrupt junctions

The behaviour of two abrupt junctions p^{+,/sup>--n and n+--p in the avalanche-breakdown mode for specific boundary conditions is investigated by the author. An empirical relation between the breakdown voltages of two complementary units is then developed. Numerical data for the Miller´s exponent ´n´ and analytical expressions previously given by the author are compared.}