Title :
Monolithically integrated long wavelength optical receiver OEICs using InAlAs/InGaAs heterojunction MESFETs (HFETs)
Author_Institution :
BNR Eur. Ltd., Harlow, UK
Abstract :
Monolithic optical receiver OEICs have been successfully fabricated on 2" diameter InP substrates by integrating an InGaAs pin photodetector with a simple InAlAs/InGaAs heterojunction MESFET (HFET) structure. Transimpedance receivers based on 1.5 mu m gate length FETs exhibited 3.5 GHz bandwidth and 19.9 pA/ square root (Hz) averaged noise current. Circuit functional yield as high as 67% has been achieved.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; 1.5 micron; 3.5 GHz; HFET; InAlAs-InGaAs; InGaAs p-i-n photodetector; InP substrates; averaged noise current; circuit functional yield; gate length; heterojunction MESFET; monolithic optical receiver OEIC; transimpedance receivers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920229
