• DocumentCode
    877757
  • Title

    Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing

  • Author

    Djie, H.S. ; Mei, T. ; Arokiaraj, J. ; Sookdhis, C. ; Yu, S.F. ; Ang, L.K. ; Tang, X.H.

  • Author_Institution
    Photonics Res. Centre, Nanyang Technol. Univ., Singapore
  • Volume
    40
  • Issue
    2
  • fYear
    2004
  • Firstpage
    166
  • Lastpage
    174
  • Abstract
    Plasma-enhanced quantum-well intermixing (QWI) has been developed for tuning the bandgap of InGaAs-InP material using an inductively coupled plasma system. The application of inductively coupled plasma enhances the interdiffusion of point defects resulting in a higher degree of intermixing. Based on a semi-empirical model of QW interdiffusion, the bandgap blue-shift with respect to the plasma exposure time and inductively coupled plasma energy has been analyzed. The theoretical results appear to be in good agreement with the experimental data of the intermixed samples. The model serves as a good simulation tool to explain the intermixing mechanism and further to optimize the intermixing process for the fabrication of the photonic integrated circuits.
  • Keywords
    III-V semiconductors; chemical interdiffusion; energy gap; gallium compounds; indium compounds; integrated optics; laser tuning; plasma materials processing; quantum well lasers; semiconductor device models; semiconductor quantum wells; spectral line shift; InGaAs-InP; InGaAs-InP material; QW interdiffusion; argon plasma-enhanced quantum-well intermixing; bandgap blue-shift; bandgap tuning; inductively coupled plasma energy; inductively coupled plasma system; photonic integrated circuits; plasma exposure time; point defects; semiempirical model; simulation tool; Argon; Circuit simulation; Coupled mode analysis; Coupling circuits; Integrated circuit modeling; Photonic band gap; Plasma applications; Plasma materials processing; Plasma simulation; Quantum wells;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2003.821542
  • Filename
    1263684