DocumentCode :
877786
Title :
Tbulk-BICS: A Built-In Current Sensor Robust to Process and Temperature Variations for Soft Error Detection
Author :
Neto, Egas Henes ; Kastensmidt, Fernanda Lima ; Wirth, Gilson
Author_Institution :
Centro de Excelencia em Tecnol. Eletron. Avancada, Univ. Estadual do Rio Grande do Sul, Porto Alegre
Volume :
55
Issue :
4
fYear :
2008
Firstpage :
2281
Lastpage :
2288
Abstract :
This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor compensating process and temperature variations. By choosing different configurations in the trimming bits, it is possible to adjust the performance of the sensor, which can increase the number of transistors monitored by a single sensor reducing the area overhead. Monte Carlo simulations are used to evaluate the sensor behavior. Results from a case-study circuit with embedded Tbulk-BICS confirm the efficiency of the technique.
Keywords :
Monte Carlo methods; electric sensing devices; fault tolerance; transient analysis; Monte Carlo simulations; Si; Tbulk-BICS; built-in current sensor; fault tolerance; silicon substrate; soft error detection; temperature variations; transient ionization detect; CMOS technology; Combinational circuits; Data mining; Ionization; Ocean temperature; Robustness; Sequential circuits; Silicon; Temperature sensors; Threshold voltage; Built-in current sensor; fault tolerance; process variations; soft errors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.920426
Filename :
4636907
Link To Document :
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