DocumentCode
877809
Title
The second breakdown V-I characteristics in the triple diffused Si transistor
Author
Agatsuma, T.
Volume
53
Issue
12
fYear
1965
Firstpage
2142
Lastpage
2143
Keywords
Anisotropic magnetoresistance; Electric breakdown; Frequency; Interference; Java; Laser beams; Laser modes; Optical surface waves; Oscillators; Phase measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1965.4524
Filename
1446454
Link To Document