Title :
Effect of Ion Energy on Charge Loss From Floating Gate Memories
Author :
Cellere, Giorgio ; Paccagnella, Alessandro ; Visconti, Angelo ; Bonanomi, Mauro ; Beltrami, Silvia ; Harboe-Sørensen, Reno ; Virtanen, Ari
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova
Abstract :
Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.
Keywords :
flash memories; integrated circuit reliability; integrated circuit testing; ion beam effects; radiation hardening (electronics); random-access storage; charge loss; floating gate memories; heavy ion energy effect; high energy facilities; medium energy facilities; reliability considerations; space environment; stored information corruption; testing procedures; Cyclotrons; Flash memory; Ion accelerators; Ion beams; Linear particle accelerator; Nonvolatile memory; Radiation effects; Random access memory; Space technology; Testing; Floating gate memories; high-energy particles; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2000779
