• DocumentCode
    877827
  • Title

    Trapping levels in silicon nitride

  • Author

    Kendall, E.J.M.

  • Author_Institution
    University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
  • Volume
    4
  • Issue
    21
  • fYear
    1968
  • Firstpage
    468
  • Lastpage
    469
  • Abstract
    The trapping levels in silicon nitride have been investigated using the thermally stimulated current technique. Traps at between 0.50 and 0.90eV below the conduction band of the nitride were found, as well as a distribution of traps at and near the silicon-silicon nitride interface about 0.10eV below the conduction band of the silicon.
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680365
  • Filename
    4210181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877827