DocumentCode
877845
Title
The realization of the effect of nonuniform distribution in semiconductor null networks
Author
Toba, Yoshitomi ; Mano, Kunio
Volume
8
Issue
2
fYear
1973
fDate
4/1/1973 12:00:00 AM
Firstpage
182
Lastpage
184
Abstract
Uniform and nonuniform distributed semiconductor devices suitable for null networks were experimentally fabricated and the effect of nonuniform distribution was observed. The temperature sensitivities were measured and compensating circuits are given. The devices are of wide application and suitable for integrated circuit fabrication.
Keywords
Distributed parameter networks; Semiconductor devices; distributed parameter networks; semiconductor devices; Active filters; Circuits; Impurities; Physics; Semiconductor devices; Silicon; System testing; Temperature measurement; Temperature sensors; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1973.1050369
Filename
1050369
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