New Analytical Solutions of the Diffusion Equation Available to Radiation Induced Substrate Currents Modeling

This paper describes some new solutions of the diffusion equation in a semiconductor slab. These solutions are computed for Dirichlet null boundary conditions in the top and bottom planes of the slab and with a null internal electric field. The proposed model takes into account a finite diffusion length and an inclined trajectory. Such solutions may be used for radiation induced substrate diffusion currents modeling.