DocumentCode
878062
Title
GaAs flipchip pin diode for millimetre-wave application
Author
Calligaro, M. ; Dua, Christian ; d´Hayer, F.
Author_Institution
Thomson Composants Microondes, Orsay, France
Volume
28
Issue
4
fYear
1992
Firstpage
371
Lastpage
372
Abstract
Millimetre-wave pin diodes have been developed for the first time in a flipchip structure, to achieve repeatability in the device features. GaAs flipchip pin diodes were manufactured on a semi-insulating substrate, and bondpads were located on mesas to minimise the parasitic elements. A waveguide switch with two biased diodes has shown, in the 94 GHz window, less than 1 dB of insertion loss, greater than 30 dB of isolation, and a switching time lower than 10 nS.
Keywords
III-V semiconductors; flip-chip devices; gallium arsenide; p-i-n diodes; semiconductor switches; solid-state microwave devices; waveguide components; 1 dB; 10 ns; 94 GHz; GaAs; biased diodes; bondpads; flip chip p-i-n diode; insertion loss; isolation; millimetre-wave application; semi-insulating substrate; switching time; waveguide switch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920232
Filename
126371
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