• DocumentCode
    878075
  • Title

    High-bias-voltage operation of GaAs transferred-electron oscillators

  • Author

    Narayan, S.Y. ; Gobat, A.R.

  • Author_Institution
    Radio Corporation of America, Microwave Applied Research Laboratory, David Sarnoff Research Center, Princeton, USA
  • Volume
    4
  • Issue
    23
  • fYear
    1968
  • Firstpage
    504
  • Lastpage
    505
  • Abstract
    Pulsed operation of epitaxial GaAs transferred-electron oscillators at a bias voltage of ten times the threshold voltage is described. The operating frequency, 14.1 GHz, was close to the transit-time frequency of 13 GHz. A maximum power output of 800 mW at 10% efficiency was obtained at 1% duty cycle. The power output and efficiency decreased with increasing duty cycle, and this decrease is attributed to the decrease in the peak/valley ratio of GaAs with increasing lattice temperature.
  • Keywords
    Gunn oscillators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680392
  • Filename
    4210208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878075