Title :
Five-transistor memory cells in ESFI MOS technology
Author :
Goser, Karl ; Pomper, Michael
fDate :
10/1/1973 12:00:00 AM
Abstract :
Compared with a conventional six-transistor memory cell in complementary MOS technology, a five-transistor cell only needs about 70 percent of the area. Memory matrices have been manufactured on epitaxial silicon films on insulators, using such cells with an area of 5700 μm/SUP 2/ (9 mil/SUP 2/). In addition, proposals for a sense circuit are made and the typical data of a 2048-b memory chip are estimated.
Keywords :
Digital integrated circuits; Flip-flops; Semiconductor storage systems; digital integrated circuits; flip-flops; semiconductor storage systems; Circuits; Flip-flops; Insulation; Manufacturing; Proposals; Read-write memory; Semiconductor films; Silicon on insulator technology; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1973.1050411
