DocumentCode
879068
Title
High-quality dielectric suitable for use with amorphous semiconductors
Author
Haden, C.R. ; Barrett, John Lee ; Stone, Jack L.
Volume
9
Issue
3
fYear
1974
fDate
6/1/1974 12:00:00 AM
Firstpage
118
Lastpage
124
Abstract
Very-high-quality Al/SUB 2/O/SUB 3/ films have been grown by anodizing aluminum films in a bath of tartaric acid, buffered with NH/SUB 4/OH and diluted with propylene glycol. Several thousand films were evaluated to demonstrate high resistivities and breakdown voltages, as well as dielectric properties stable with respect to film thickness, frequency, and applied voltage. It is shown that an optimum solution, an optimum buffer, an optimum pH, and an optimum anodization time exist.
Keywords
Aluminium compounds; Amorphous semiconductors; Electric breakdown of solids; Insulating thin films; aluminium compounds; amorphous semiconductors; electric breakdown of solids; insulating thin films; Aluminum; Amorphous semiconductors; Anti-freeze; Conductivity; Dielectric materials; Dielectrics and electrical insulation; Frequency; Leakage current; Semiconductor films; Solid state circuits;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1974.1050478
Filename
1050478
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