Comparison of ionizing radiation effects in 0.18 and 0.25 μm CMOS technologies for analog applications

Author

Manghisoni, Massimo ; Ratti, Lodovico ; Re, Valerio ; Speziali, Valeria ; Traversi, Gianluca ; Candelori, Andrea

Author_Institution

Dipt. di Ingegneria Ind.e, Univ. di Bergamo, Dalmine, Italy

Volume

50

Issue

6

fYear

2003

Firstpage

1827

Lastpage

1833

Abstract

We present a comparative study of ionizing radiation effects in 0.18 and 0.25 μm CMOS transistors, with the goal of evaluating the impact of device scaling in the design of low-noise rad-hard analog circuits. Device parameters were monitored before and after irradiation with 10 keV X-rays and ⁶⁰Co γ-rays and after subsequent annealing. The effects of different biasing conditions during irradiation and annealing are discussed. The results are used to point out the different radiation hardness properties of the examined technologies, belonging to different CMOS generations.

Keywords

1/f noise; CMOS analogue integrated circuits; X-ray effects; annealing; gamma-ray effects; integrated circuit noise; radiation hardening (electronics); thermal noise; 1/f noise; 10 keV; CMOS transistors; annealing; biasing conditions; device scaling; front-end electronics; ionizing radiation effects; low-noise rad-hard analog circuits; radiation hardness properties; threshold voltage; total dose; Analog circuits; Annealing; CMOS analog integrated circuits; CMOS technology; Ionizing radiation; Leakage current; MOSFETs; Physics; Radiation hardening; X-rays;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.820767

Filename

1263807