• DocumentCode
    879161
  • Title

    Bulk damage caused by single protons in SDRAMs

  • Author

    Shindou, H. ; Kuboyama, S. ; Ikeda, N. ; Hirao, T. ; Matsuda, S.

  • Author_Institution
    Nat. Space Dev. Agency of Japan, Ibaraki, Japan
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    1839
  • Lastpage
    1845
  • Abstract
    A new failure mode that is attributable to the bulk damage caused by single protons has been reported in 256-Mbit SDRAMs. The refresh rate required to retain memorized data was measured as a typical parameter to detect the effect. We performed the proton irradiation test and discussed results regarding the influence of this failure.
  • Keywords
    DRAM chips; integrated circuit reliability; proton effects; radiation hardening (electronics); space vehicle electronics; 256 Mbit; SDRAM; bulk damage; failure mode; incidence angle; proton irradiation test; refresh rate; single event upsets; single protons; total ionizing dose; Capacitors; DRAM chips; Degradation; Electrons; Integrated circuit measurements; Performance evaluation; Protons; Random access memory; SDRAM; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.820727
  • Filename
    1263809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879161