• DocumentCode
    879328
  • Title

    NIEL for heavy ions: an analytical approach

  • Author

    Messenger, Scott R. ; Burke, Edward A. ; Xapsos, Michael A. ; Summers, Geoffrey P. ; Walters, Robert J. ; Jun, Insoo ; Jordan, Thomas

  • Author_Institution
    SFA Inc., Largo, MD, USA
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    1919
  • Lastpage
    1923
  • Abstract
    We describe an analytical model for calculating nonionizing energy loss (NIEL) for heavy ions based on screened Coulomb potentials in the nonrelativistic limit. The model applies to any incident ion on any target material where the Coulomb interaction is primarily responsible for atomic displacement. Results are compared with previous methods of extracting NIEL from Monte Carlo SRIM runs. Examples of NIEL calculations are given for incident ions having energies ranging from the threshold for atomic displacement to 1 GeV. The incident ions include H, He, B, Si, Fe, Xe, and Au. Example targets include Si, GaAs, InP, and SiC.
  • Keywords
    III-V semiconductors; Monte Carlo methods; elemental semiconductors; energy loss of particles; gallium arsenide; indium compounds; ion beam effects; radiation hardening (electronics); silicon; silicon compounds; wide band gap semiconductors; 1 GeV; Au; B; Fe; GaAs; H; He; InP; Monte Carlo SRIM runs; Si; SiC; Xe; heavy ions; nonionizing energy loss; nonrelativistic limit; screened Coulomb potentials; Analytical models; Energy loss; Gold; Helium; Iron; Laboratories; Monte Carlo methods; NASA; Protons; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.820762
  • Filename
    1263821