DocumentCode
879328
Title
NIEL for heavy ions: an analytical approach
Author
Messenger, Scott R. ; Burke, Edward A. ; Xapsos, Michael A. ; Summers, Geoffrey P. ; Walters, Robert J. ; Jun, Insoo ; Jordan, Thomas
Author_Institution
SFA Inc., Largo, MD, USA
Volume
50
Issue
6
fYear
2003
Firstpage
1919
Lastpage
1923
Abstract
We describe an analytical model for calculating nonionizing energy loss (NIEL) for heavy ions based on screened Coulomb potentials in the nonrelativistic limit. The model applies to any incident ion on any target material where the Coulomb interaction is primarily responsible for atomic displacement. Results are compared with previous methods of extracting NIEL from Monte Carlo SRIM runs. Examples of NIEL calculations are given for incident ions having energies ranging from the threshold for atomic displacement to 1 GeV. The incident ions include H, He, B, Si, Fe, Xe, and Au. Example targets include Si, GaAs, InP, and SiC.
Keywords
III-V semiconductors; Monte Carlo methods; elemental semiconductors; energy loss of particles; gallium arsenide; indium compounds; ion beam effects; radiation hardening (electronics); silicon; silicon compounds; wide band gap semiconductors; 1 GeV; Au; B; Fe; GaAs; H; He; InP; Monte Carlo SRIM runs; Si; SiC; Xe; heavy ions; nonionizing energy loss; nonrelativistic limit; screened Coulomb potentials; Analytical models; Energy loss; Gold; Helium; Iron; Laboratories; Monte Carlo methods; NASA; Protons; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.820762
Filename
1263821
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