Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

Author

White, B.D. ; Bataiev, M. ; Goss, S.H. ; Hu, X. ; Karmarkar, A. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Schaff, W.J. ; Brillson, L.J.

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

Volume

50

Issue

6

fYear

2003

Firstpage

1934

Lastpage

1941

Abstract

We have characterized high-electron mobility transistors and corresponding unprocessed material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the electrical contacts at low fluences (10¹¹-10¹⁴ p⁺/cm²) and degradation of the channel properties for higher fluences. In conjunction with the electrical data, cathodoluminescence and secondary-ion mass spectrometry results suggest mechanisms for the higher fluence degradation.

Keywords

III-V semiconductors; aluminium compounds; cathodoluminescence; electrical conductivity; gallium compounds; high electron mobility transistors; proton effects; radiation hardening (electronics); wide band gap semiconductors; 1.8 MeV; 1.8 MeV proton irradiated AlGaN/GaN HEMT structures; AlGaN-GaN; cathodoluminescence; chemical properties; electrical contacts; electrical properties; high-electron mobility transistors; higher fluence degradation; secondary-ion mass spectrometry; spectral properties; Aluminum gallium nitride; Chemicals; Contacts; Degradation; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Mass spectroscopy; Protons;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.821827

Filename

1263824