Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

Author

Tuominen, E. ; Härkönen, J. ; Tuovinen, E. ; Lassila-Perini, K. ; Luukka, P. ; Mehtälä, P. ; Nummela, S. ; Nysten, J. ; Zibellini, A. ; Li, Z. ; Heikkilä, P. ; Ovchinnikov, V. ; Yli-Koski, M. ; Laitinen, P. ; Pirojenko, A. ; Riihimäki, I. ; Virtanen, A.

Author_Institution

Helsinki Inst. of Phys., Geneva, Switzerland

Volume

50

Issue

6

fYear

2003

Firstpage

1942

Lastpage

1946

Abstract

We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.

Keywords

annealing; crystal growth from melt; elemental semiconductors; leakage currents; proton effects; radiation hardening (electronics); silicon; space charge; 10 MeV; 20 MeV; Czochralski Si; Si; depletion voltage; leakage current; pin-diodes; radiation hardness; space charge sign inversion; standard float zone Si; transient current technique; Conductivity; Current measurement; Laboratories; Leakage current; Physics; Protons; Radiation detectors; Silicon; Space charge; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.821405

Filename

1263825