Single particle dark current spikes induced in CCDs by high energy neutrons

Author

Chugg, A.M. ; Jones, R. ; Moutrie, M.J. ; Armstrong, J.R. ; King, D.B.S. ; Moreau, N.

Author_Institution

Radiat. Effects Group, MBDA U.K. Ltd., Bristol, UK

Volume

50

Issue

6

fYear

2003

Firstpage

2011

Lastpage

2017

Abstract

This paper presents an analysis of dark signal nonuniformity induced in a charge coupled device (CCD) by 90 MeV neutrons. Random telegraph signal switching between multiple levels was seen for some dark current spikes. The probability distribution of the dark current spikes is shown to be pseudo-exponential and the distribution remains exponential during annealing, but with an increasing decay constant. Similar dark current spikes were also observed to be generated in an APS device exposed to high energy neutrons at the WNR facility.

Keywords

annealing; charge-coupled devices; dark conductivity; energy loss of particles; neutron effects; radiation hardening (electronics); semiconductor device noise; 90 MeV; CCDs; annealing; dark signal nonuniformity; distribution; high energy neutrons; increasing decay constant; probability distribution; pseudo-exponential; random telegraph signal switching; single particle dark current spikes; Annealing; Charge coupled devices; Dark current; Neutrons; Particle beams; Probability distribution; Protons; Sensor arrays; Signal analysis; Telegraphy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.821813

Filename

1263835