• DocumentCode
    879509
  • Title

    14-MeV neutron and Co60 gamma testing of a power MOSFET optocoupler

  • Author

    McMarr, P.J. ; Nelson, M.E. ; Hughes, H. ; Delikat, K.J.

  • Author_Institution
    U.S. Naval Res. Lab., Washington, DC, USA
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2030
  • Lastpage
    2037
  • Abstract
    The effect of radiation from neutron activation of package materials was studied using a power MOSFET optocoupler as the test device. The optocouplers were exposed to 14-MeV neutrons to a fluence of 1×1011 n/cm2, with the devices switching during exposure. Electrical characterization was performed after each neutron exposure. A separate set of optocouplers was then irradiated using a Co60 source. These results combined with gamma ray spectroscopy showed that radiation from neutron activation had a significant effect on the electrical parameters of the optocouplers.
  • Keywords
    gamma-ray effects; integrated optoelectronics; neutron effects; optical couplers; power MOSFET; radiation hardening (electronics); 14 MeV; 14-MeV neutrons; electrical characterization; gamma ray spectroscopy; gamma-ray effects; neutron activation; package materials; power MOSFET optocoupler; Laboratories; Leakage current; MOSFET circuits; Neutrons; Packaging; Performance evaluation; Power MOSFET; Radiation effects; Switches; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821394
  • Filename
    1263838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879509