• DocumentCode
    879537
  • Title

    Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

  • Author

    Roche, P. ; Gasiot, G. ; Forbes, K. ; O´Sullivan, V. ; Ferlet, V.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2046
  • Lastpage
    2054
  • Abstract
    This paper presents experimental ASER on SOI and BULK SRAMs for the 250-, 130-, and 90-nm technologies. The key parameters controlling soft error rate (SER) in these technologies are modeled with Monte Carlo simulations to predict SER to the 65-nm node.
  • Keywords
    Monte Carlo methods; SRAM chips; radiation hardening (electronics); silicon-on-insulator; 130 nm; 130-nm technology node; 250 nm; 65 nm; 90 nm; Monte Carlo simulations; SRAMs; commercial SOI; soft error rate; Alpha particles; Atmospheric modeling; Error analysis; Manufacturing; Monte Carlo methods; Neutrons; Paper technology; Random access memory; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821588
  • Filename
    1263840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879537