Title :
Contribution of SiO2 in neutron-induced SEU in SRAMs
Author :
Wrobel, F. ; Palau, J.-M. ; Calvet, M.-C. ; Iacconi, P.
Author_Institution :
LPES-CRESA, Nice Univ., France
Abstract :
The aim of this work is to show the contribution of nuclear events occurring with oxygen nuclei in SRAM-oxide such as SiO2 and emphasize that they are likely to increase the soft error rate by about several tens of percent. Recoil energies are calculated with a dedicated subroutine, which accounts for elastic and nonelastic reactions in the 5-150-MeV energy range. SEU cross sections are evaluated using the criterion of critical energy deposited in a cubic sensitive volume.
Keywords :
Monte Carlo methods; SRAM chips; neutron effects; passivation; radiation hardening (electronics); silicon compounds; 5 to 150 MeV; Monte Carlo; SRAMs; SiO2; critical energy; cubic sensitive volume; neutron-induced SEU; nonelastic reactions; recoil energies; single event upset; soft error rate; Algorithms; Atomic layer deposition; Error analysis; Insulation; Neutrons; Optical sensors; Passivation; Random access memory; Silicon on insulator technology; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821596
