Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-μm SiGe heterojunction bipolar transistors and circuits

Author

Reed, Robert A. ; Marshall, Paul W. ; Pickel, James C. ; Carts, Martin A. ; Fodness, Bryan ; Niu, Guofu ; Fritz, Karl ; Vizkelethy, Gyorgy ; Dodd, Paul E. ; Irwin, Tim ; Cressler, John D. ; Krithivasan, Ramkumar ; Riggs, Pamela ; Prairie, Jason ; Randall,

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

Volume

50

Issue

6

fYear

2003

Firstpage

2184

Lastpage

2190

Abstract

Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallel-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.

Keywords

Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; ion beam effects; radiation hardening (electronics); 0.20 micron; 0.20-μm SiGe heterojunction bipolar transistors; SiGe; charge collection mechanisms; heavy-ion broad-beam irradiation; heterojunction bipolar transistor circuits; microprobe studies; right rectangular parallel-piped model; sensitive volume; single-event upsets; Bandwidth; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Logic; Microelectronics; NASA; Silicon germanium; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.821815

Filename

1263859