DocumentCode
879799
Title
Fully decoded MNOS storage arrays in ESFI MOS technology
Author
Horninger, Karlheinrich
Volume
9
Issue
6
fYear
1974
fDate
12/1/1974 12:00:00 AM
Firstpage
444
Lastpage
446
Abstract
The operation of MNOS memory transistors realized in thin epitaxial silicon films on insulators (ESFI) is described for writing, erasing, and reading, and their behavior is explained by means of the so-called storage characteristics. From exploratory matrices with 2×2 elements the expected data of a 4-kbit chip are estimated.
Keywords
Digital integrated circuits; Monolithic integrated circuits; Semiconductor storage systems; digital integrated circuits; monolithic integrated circuits; semiconductor storage systems; Circuits; Decoding; Electrodes; Insulation; Isolation technology; Semiconductor films; Silicon on insulator technology; Substrates; Voltage; Writing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1974.1050540
Filename
1050540
Link To Document