• DocumentCode
    879987
  • Title

    Total dose hardness assurance testing using laboratory radiation sources

  • Author

    Paillet, P. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Ferlet-Cavrois, V. ; Jones, R.L. ; Flament, O. ; Blackmore, E.W.

  • Author_Institution
    CEA/DIF, France
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2310
  • Lastpage
    2315
  • Abstract
    NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons, and compared with values obtained for X-ray and Co-60 irradiations.
  • Keywords
    MOSFET; X-ray effects; electron beam effects; gamma-ray effects; proton effects; radiation hardening (electronics); semiconductor device testing; silicon-on-insulator; space vehicle electronics; NMOS transistors; SOI transistors; X-ray radiation sources; charge yield; electron radiation sources; gamma radiation sources; initial recombination; laboratory radiation sources; proton radiation sources; qualification testing; radiation-induced charge; space environment; stopping powers; threshold voltage shifts; total dose hardness assurance testing; CMOS technology; Degradation; Electrons; Isolation technology; Laboratories; MOSFETs; Protons; Testing; Threshold voltage; Yield estimation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821392
  • Filename
    1263878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879987