Title :
Bias dependence of FD transistor response to total dose irradiation
Author :
Flament, O. ; Torres, A. ; Ferlet-Cavrois, V.
Author_Institution :
CEA-DIF, Bruyeres le Chatel, France
Abstract :
In this work, we explore the worst case bias response of fully depleted transistors. Floating body and external body ties transistors fabricated on different SOI substrates are characterized using X-rays. The influence of gate length is presented. The coupling effect between front and back gate as well as latch triggered by floating body effect are evaluated as a function of dose level.
Keywords :
MOSFET; SIMOX; X-ray effects; buried layers; hole traps; radiation hardening (electronics); silicon-on-insulator; SOI substrates; X-ray effects; buried oxide; charge trapping; coupling effect; external body ties; floating body ties; fully depleted transistors; gate length; latch-up; threshold voltage shift; total dose irradiation; trapped hole concentration; two-dimensional simulations; worst case bias response; CMOS technology; FinFETs; Isolation technology; Leakage current; MOS devices; MOSFET circuits; Semiconductor films; Silicon on insulator technology; Substrates; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.822594
