DocumentCode :
880316
Title :
A simplified and efficient numerical model for charge injection in acoustic charge transport devices
Author :
Knapp, Scott M. ; Malocha, Donald C. ; Liou, Juin J.
Author_Institution :
Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA
Volume :
39
Issue :
8
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
1811
Lastpage :
1820
Abstract :
A numerically efficient model for simulating electrical charge injection in acoustic charge transport (ACT) devices is developed. This model simplifies an existing charge injection model and is derived using the coupled set of semiconductor device equations. The present model increases the computational efficiency of decoupling and reducing the number of mathematical equations forming the charge injection model. A brief overview of the original model is presented. The assumptions leading to the decoupling and reduction of the device equations are described, as are differences between the two models. Results computed by the simplified model are shown and compared to the results from the original charge injection model and experimental measurement. The present model is able to examine 45 SAW wave positions and 163 contact voltages in 8 h on a 25 MHz PC in comparison to the previous model which simulated 59 wave positions and 164 contact voltages on an Hewlett-Packard 9000 series 500 minicomputer in 37 h. A substantial reduction in computation time is achieved
Keywords :
electronic engineering computing; numerical methods; semiconductor device models; surface acoustic wave devices; 25 MHz; ACT; Hewlett-Packard 9000 series 500 minicomputer; PC; SAW wave positions; acoustic charge transport devices; charge injection model; computation time; computational efficiency; contact voltages; electrical charge injection simulation; mathematical equations; numerical model; semiconductor device equations; Acoustic devices; Charge measurement; Computational efficiency; Computational modeling; Current measurement; Difference equations; Mathematical model; Numerical models; Semiconductor devices; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.144669
Filename :
144669
Link To Document :
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