DocumentCode
880383
Title
Gunn instabilities with surface loading
Author
Hartnagel, H.L.
Volume
5
Issue
14
fYear
1969
Firstpage
303
Lastpage
304
Abstract
The conditions for Gunn-effect domain formation are derived for the cases of loading the semiconductor surface with magnetic or dielectric materials. This allows one to explain the experimental results obtained with BaTiO3 by Kataoka et al.
Keywords
Gunn effect; semiconductor materials;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690231
Filename
4210449
Link To Document